High efficiency quadrature HBT power amplifier optimized for use with digital predistortion

Author

Ledezma, Luis M. ; Vysyaraju, Rajah V.

Author_Institution

Qorvo - Infrastruct. & Defense Products, Richardson, TX, USA

fYear

2015

fDate

13-15 April 2015

Firstpage

1

Lastpage

3

Abstract

We demonstrate a 28dBm high efficiency quadrature power amplifier for use with LTE signals and digital predistortion (DPD). The PA is fabricated in an InGaP heterojunction bipolar transistor (HBT) process. It achieves an efficiency of 28% at an average output power of 28dBm with a 5V power supply. To the best of the authors knowledge this is the highest efficiency reported for a non-Doherty multi-stage power amplifier when operated at 8dB power back-off from Psat.

Keywords

Long Term Evolution; heterojunction bipolar transistors; indium compounds; power amplifiers; DPD; LTE signals; digital predistortion; efficiency 28 percent; heterojunction bipolar transistor process; high-efficiency quadrature HBT power amplifier; nonDoherty multistage power amplifier; power supply; voltage 5 V; CMOS integrated circuits; CMOS technology; Gallium arsenide; Gallium nitride; Sun; Bias networks; digital predistortion (DPD); heterojunction bipolar transistor (HBT); long-term evolution (LTE); nonlinear distortion; power amplifiers (PA);

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2015 IEEE 16th Annual

Conference_Location

Cocoa Beach, FL

Type

conf

DOI

10.1109/WAMICON.2015.7120414

Filename

7120414