DocumentCode
711725
Title
True-differential/common-mode mixed-mode S-parameter measurement techniques for cellular and 4G bandwidths
Author
Hur, Byul ; Eisenstadt, William R.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
fYear
2015
fDate
13-15 April 2015
Firstpage
1
Lastpage
5
Abstract
This paper introduces true-differential/common-mode mixed-mode S-parameter measurement techniques for cellular and 4G bandwidths. The on-chip differential amplifier is designed in a 130-nm RFCMOS process, where the simulated differential mode S-parameters are also presented over the wide frequencies (0.5 ~ 3.5 GHz) which includes cellular frequencies. The differential gains are 8.4 dB and 7.9 dB at 1 GHz and 3 GHz, respectively. The non-linear effects of the RF circuits can result in mixed-mode S-parameter measurement errors in virtual differential mode. Because real differential and common mode input signals stimulate a DUT in true differential mode, true differential/common mode measurements may reduce the measurement errors caused by the non-linear effects. Differential/common mixed-mode S-parameter tests were performed using an AD8350 IC from 0.1 GHz to 2.0 GHz. The various comparisons of measured input P1dB compression points and common mode rejection ratio (CMRRs) in true and virtual differential modes are presented.
Keywords
4G mobile communication; CMOS analogue integrated circuits; S-parameters; cellular radio; differential amplifiers; integrated circuit design; integrated circuit testing; measurement errors; radiofrequency amplifiers; radiofrequency integrated circuits; 4G bandwidths; AD8350 IC; CMRR; DUT; RF CMOS process; RF circuits; cellular bandwidths; cellular frequencies; common mode rejection ratio; differential gains; differential-common mixed-mode S-parameter tests; frequency 0.1 GHz to 2.0 GHz; frequency 0.5 GHz to 3.5 GHz; gain 7.9 dB; gain 8.4 dB; mixed-mode S-parameter measurement errors; mixed-mode S-parameter measurement techniques; on-chip differential amplifier; size 130 nm; true-differential-common-mode measurement techniques; virtual differential mode; Bandwidth; CMOS integrated circuits; Frequency measurement; Gain measurement; Loss measurement; Measurement uncertainty; Radio frequency; Cellular band test; Differential amplifiers; Mixed-mode S-parameters; Reflection coefficient; Reflectometry;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless and Microwave Technology Conference (WAMICON), 2015 IEEE 16th Annual
Conference_Location
Cocoa Beach, FL
Type
conf
DOI
10.1109/WAMICON.2015.7120422
Filename
7120422
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