DocumentCode
712192
Title
Recent advances in avalanche photodiodes
Author
Campbell, Joe C.
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of Virginia, Charlottesville, VA, USA
fYear
2015
fDate
22-26 March 2015
Firstpage
1
Lastpage
3
Abstract
This paper will review recent advances in linear- and Geiger mode avalanche photodiodes (APDs). The focus for linear-mode devices will be materials and structural modifications to the conventional InP/InGaAs APD that have enabled reduced excess noise and enhanced gain-bandwidth products. The discussion of Geiger mode APDs will cover the basic operation and principal performance parameters with emphasis on techniques to reduce afterpulsing.
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; integrated optoelectronics; noise; Geiger mode APD; InP-InGaAs; afterpulsing reduction; avalanche photodiodes; enhanced gain bandwidth; linear APD; reduced excess noise; structural modifications; Avalanche photodiodes; Bandwidth; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Noise; Photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location
Los Angeles, CA
Type
conf
Filename
7121526
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