A Robust W-Shape-Buffer LIGBT Device With Large Current Capability

Author

Qinsong Qian ; Siyang Liu ; Weifeng Sun ; Hao Wang ; Chunwei Zhang

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

Volume

29

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

4466

Lastpage

4469

Abstract

A novel “W”-shape-buffer lateral insulator gate bipolar transistor (WB-LIGBT) is proposed. In this LIGBT, the buffer layer is changed from the typical “U” shape to a novel “W” shape, so as to provide a large current capability and high reliability to protect the device from electrostatic discharge (ESD) damage. The proposed WB-LIGBT has been implemented with a 0.5 μm CMOS technology by using silicon on insulator material. The experiment results show an improvement of 13% in current capability and 27% in ESD robustness comparing with the conventional LIGBT. The suggested WB-LIGBT has been applied for the output device of plasma display panel scan driver IC.

Keywords

CMOS integrated circuits; buffer layers; electrostatic discharge; insulated gate bipolar transistors; semiconductor device reliability; silicon-on-insulator; CMOS technology; ESD damage; U-shape; buffer layer; electrostatic discharge; large current capability; lateral insulator gate bipolar transistor; plasma display panel scan driver IC; reliability; robust W-shape-buffer LIGBT device; silicon on insulator material; size 0.5 mum; Anodes; Cathodes; Electrostatic discharges; Integrated circuits; Logic gates; Plasma displays; Shape; Current capability; W-shape-buffer; electrostatic discharge (ESD); lateral insulator gate bipolar transistor (LIGBT);

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2014.2299822

Filename

6718152