Title :
A WDM-Compatible 4 × 32-Gb/s CMOS-driven electro-absorption modulator array
Author :
Lee, B.G. ; Rimolo-Donadio, R. ; Rylyakov, A.V. ; Proesel, J. ; Bulzacchelli, J.F. ; Baks, C.W. ; Meghelli, M. ; Schow, C.L. ; Ramaswamy, A. ; Roth, J.E. ; Shin, J.H. ; Koch, B. ; Sparacin, D.K. ; Fish, G.A.
Author_Institution :
T.J. Watson Res. Center, IBM Res., New York, NY, USA
Abstract :
A four-channel electro-absorption-modulator array, driven by 32-nm CMOS drivers providing 2-V peak-to-peak output swing, operates with BER <; 10-12 at a data rate of 4 × 32 Gb/s and dissipates 170 mW of power.
Keywords :
CMOS integrated circuits; driver circuits; electroabsorption; optical arrays; optical transceivers; wavelength division multiplexing; 32-nm CMOS drivers; WDM-compatible CMOS-driven electroabsorption modulator array; bit rate 32 Gbit/s; data rate; energy efficient optical transceivers; low cost optical transceivers; peak-to-peak output swing; power 170 mW; power dissipation; Arrays; Bit error rate; CMOS integrated circuits; Modulation; Optical attenuators; Optical transmitters; Optical waveguides;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
