Title :
Heterogeneously integrated III–V on silicon distributed feedback lasers at 1310 nm
Author :
Duprez, H. ; Descos, A. ; Ferrotti, T. ; Harduin, J. ; Jany, C. ; Card, T. ; Myko, A. ; Sanchez, L. ; Sciancalepore, C. ; Menezo, S. ; Ben Bakir, B.
Author_Institution :
DOPT, CEA-LETI, Grenoble, France
Abstract :
We report performances of III-V/Si distributed feedback lasers at 1310 nm. Continuous wave regime is achieved up to 55°C, with room-temperature threshold of 35 mA, while mode-hope-free operation with side-mode suppression ratio above 55 dB is measured. The -3dB bandwidth is 6.7 GHz.
Keywords :
III-V semiconductors; distributed feedback lasers; elemental semiconductors; laser beams; semiconductor lasers; silicon; III-V/Si distributed feedback lasers; Si; bandwidth 6.7 GHz; continuous wave regime; current 35 mA; heterogeneous integration; mode-hope-free operation; side-mode suppression ratio; temperature 293 K to 298 K; wavelength 1310 nm; Distributed feedback devices; Laser feedback; Laser modes; Optical waveguides; Silicon; Temperature measurement; Waveguide lasers;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
