Title :
Dilute Nitride SOAs for high-speed data processing in variable temperature conditions
Author :
Giannoulis, G. ; Korpijarvi, V.-M. ; Iliadis, N. ; Makela, J. ; Viheriala, J. ; Apostolopoulos, D. ; Guina, M. ; Avramopoulos, H.
Author_Institution :
Sch. of Electr. & Comput. Eng., Nat. Tech. Univ. of Athens, Athens, Greece
Abstract :
We present the first experimental study of a Dilute Nitride SOA with high-speed gain dynamics and attractive thermal characteristics as a data processing element at 10Gb/s and at different operating temperatures.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; optical communication equipment; optical information processing; optical wavelength conversion; quantum well lasers; semiconductor optical amplifiers; GaInNAsSb-GaAs; bit rate 10 Gbit/s; dilute nitride SOA; high-speed data processing; high-speed gain dynamics; semiconductor optical amplifiers; thermal characteristics; variable temperature conditions; wavelength conversion; Optical transmitters; Optical waveguides; Quantum dot lasers; Semiconductor optical amplifiers; Stimulated emission; Temperature measurement;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
