Title :
20Gb/s PAM-4 transmission from 35 to 90°C by modulating a Silicon Ring Resonator Modulator with 2Vpp
Author :
Dubray, O. ; Menezo, S. ; Blampey, B. ; Le Maitre, P. ; Carpentier, J.F. ; Ben Bakir, B. ; Fournier, M. ; Messaoudene, S.
Author_Institution :
CEA-LETI, Grenoble, France
Abstract :
A PAM-4 transmission is established by modulating a Si-RRM with a 2Vpp driving voltage. A 20Gb/s bit-rate is achieved with an 8GHz bandwidth, and maintained while the Si-chip temperature is varied from 35 to 90°C.
Keywords :
elemental semiconductors; integrated optics; optical modulation; pulse amplitude modulation; silicon; PAM-4 transmission; Si; Si-RRM; Si-chip temperature; bandwidth 8 GHz; bit rate 20 Gbit/s; driving voltage; silicon ring resonator modulator; temperature 35 degC to 90 degC; voltage 2 V; Amplitude modulation; CMOS integrated circuits; Decision support systems; Frequency modulation; High-speed optical techniques; Optical modulation; Transfer functions;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
