DocumentCode
712693
Title
Ultra-low loss CMOS compatible multi-layer Si3 N4 -on-SOI platform for 1310nm wavelength
Author
Ying Huang ; Xiaoguang Tu ; Lim, Andy Eu-Jin ; Junfeng Song ; Tsung-Yang Liow ; Guo-Qiang Lo
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2015
fDate
22-26 March 2015
Firstpage
1
Lastpage
3
Abstract
We demonstrated the applications of our Si3N4-on-SOI platform for O-band operation with propagation and interlayer transition loss of ~0.24dB/cm and ~0.2dB, respectively. We also characterized our SOI-based Ge photo-detector and silicon modulator at λ= 1310nm.
Keywords
CMOS integrated circuits; elemental semiconductors; germanium; integrated optoelectronics; optical losses; optical modulation; photodetectors; silicon; silicon compounds; silicon-on-insulator; Ge; O-band operation; SOI-based Ge photo-detector; Si; Si3N4-Si; interlayer transition loss; propagation; silicon modulator; ultra-low loss CMOS compatible multilayer Si3N4-on-SOI platform; wavelength 1310 nm; Broadband communication; Decision support systems; Extinction ratio; Microelectronics; Optimized production technology; Roads; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location
Los Angeles, CA
Type
conf
Filename
7122079
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