Title :
High-Performance Single-Crystal-Like Strained-Silicon Nanowire Thin-Film Transistors via Continuous-Wave Laser Crystallization
Author :
Chia-Hsin Chou ; Wei-Sheng Chan ; I-Che Lee ; Chao-Lung Wang ; Chun-Yu Wu ; Po-Yu Yang ; Chan-Yu Liao ; Kuang-Yu Wang ; Huang-Chung Cheng
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
High-performance polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs) have been demonstrated via continuous-wave laser crystallization (CLC) to exhibit the low subthreshold swing of 216 mV/decade and high ON/OFF ratio of 1.6×109. In addition, the thermal stress of ~800 MPa induced from the CLC process also contributed to the single-crystal-like silicon NW CLC TFTs to achieve an excellent field-effect mobility of up to 900 cm2V-1s-1.
Keywords :
crystallisation; elemental semiconductors; field effect transistors; nanowires; silicon; thermal stresses; thin film transistors; CLC process; NW TFT; Si; continuous-wave laser crystallization; field-effect mobility; high-performance single-crystal-like strained-nanowire thin-film transistor; thermal stress; Crystallization; Films; Logic gates; Performance evaluation; Silicon; Thermal stresses; Thin film transistors; Continuous-wave laser crystallization (CLC); Continuous-wave laser crystallization (CLC),; nanowire (NW); polycrystalline silicon (poly-Si); strained-silicon; thermal stress;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2405760
