On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

Author

Moens, P. ; Vanmeerbeek, P. ; Banerjee, A. ; Guo, J. ; Liu, C. ; Coppens, P. ; Salih, A. ; Tack, M. ; Caesar, M. ; Uren, M.J. ; Kuball, M. ; Meneghini, M. ; Meneghesso, G. ; Zanoni, E.

Author_Institution

ON Semicond., Oudenaarde, Belgium

fYear

2015

fDate

10-14 May 2015

Firstpage

37

Lastpage

40

Abstract

A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented. By exploring different Carbon doping profiles in the epi layers, the substrate buffer leakage is substantially reduced, which in turns results in lower dynamic Ron. The traps in the epi structure are characterized by different electrical techniques such as drain current transient, on-the-fly trapping and ramped back-gating experiments.

Keywords

III-V semiconductors; carbon; gallium compounds; power HEMT; power semiconductor devices; semiconductor doping; wide band gap semiconductors; GaN; buffer traps; carbon-doping; drain current transient; electrical techniques; electrons; leakage current; on-the-fly trapping; power devices; ramped back-gating; voltage 650 V; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; HEMTs; Leakage currents; Silicon compounds; Substrates; AlGaN/GaN; Carbon; Dynamic Ron; HEMT; offstate leakage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123383

Filename

7123383