Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd

Author

Tega, Naoki ; Yoshimoto, Hiroyuki ; Hisamoto, Digh ; Watanabe, Naoki ; Shimizu, Haruka ; Sato, Shintaroh ; Mori, Yuki ; Ishigaki, Takashi ; Matsumura, Mieko ; Konishi, Kumiko ; Kobayashi, Keisuke ; Mine, Toshiyuki ; Akiyama, Satoru ; Fujita, Ryusei ; Shim

Author_Institution

Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan

fYear

2015

fDate

10-14 May 2015

Firstpage

81

Lastpage

84

Abstract

To improve both conduction loss and switching loss, trench-etched double-diffused MOS (TED MOS) is proposed and fabricated. The trench side channels of TED MOS can provide both high channel mobility and wide channel width to decrease on-resistance (R_onA). Moreover, TED MOS also achieves low gate-to-drain capacitance because its gates and trenches are completely covered with a P-body. Our results show that the figure of merit (R_onA×Q_gd) of TED MOS can be reduced by 70% compared to that of a conventional double-diffused MOS.

Keywords

MOS integrated circuits; carrier mobility; etching; isolation technology; silicon compounds; wide band gap semiconductors; P-body; SiC; TED MOS; channel mobility; conduction loss; gate-to-drain capacitance; switching loss; trench side channels; trench-etched double-diffused SiC MOS; Capacitance; Logic gates; Resistance; Scattering; Silicon carbide; Switches; Switching loss; DMOS; MOS; SiC; silicon carbide; trench;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123394

Filename

7123394