Title :
Critical overcurrent turn-off close to IGBT current saturation
Author :
Philippou, A. ; Jaeger, C. ; Laven, J.G. ; Baburske, R. ; Schulze, H.-J. ; Pfirsch, F. ; Niedernostheide, F.-J. ; Vellei, A. ; Itani, H.
Author_Institution :
Infineon Technol. AG, Neubiberg, Germany
Abstract :
A failure mechanism in the edge termination of a 1200V IGBT during overcurrent turn-off is studied with simulations and verified by experiments. The position of the destruction in the experiment can be correlated to the formation of a critical filament in the simulation. The destruction mechanism is investigated in detail. It is only observed if the IGBT enters its current saturation regime. I.e., the IGBT survives a turn-off from the same current level for an increased gate voltage. It is shown that an IGBT provided with a properly-designed High Dynamic Ruggedness (HDR) edge termination structure [1] is no longer susceptible to the destruction mechanism.
Keywords :
failure analysis; insulated gate bipolar transistors; overcurrent protection; HDR edge termination structure; IGBT current saturation regime; critical overcurrent turn-off; destruction mechanism; failure mechanism; high dynamic ruggedness; voltage 1200 V; Current density; Insulated gate bipolar transistors; Logic gates; Plasma density; Robustness; Switches;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123402
