Title :
Modeling spatial and energy oxide trap distribution responsible for NBTI in p-channel power U-MOSFETs
Author :
Tallarico, Andrea N. ; Sangiorgi, Enrico ; Fiegna, Claudio ; Magnone, Paolo ; Barletta, Giacomo ; Magri, Angelo
Author_Institution :
DEI-“Guglielmo Marconi”, Univ. of Bologna, Cesena, Italy
Abstract :
In this paper, we present a combined measurement/simulation method, implemented in order to estimate the spatial and energy oxide trap distribution induced by negative bias temperature instability (NBTI) stress in p-channel power U-MOSFETs. The methodology consists in analyzing the recovery phase at different bias conditions and correlating the results with TCAD numerical simulations. We found an oxide trap distribution positioned between 2.24 and 3.04 nm distant from oxide/channel interface with an energy level confined in the silicon bandgap.
Keywords :
negative bias temperature instability; power MOSFET; semiconductor device models; technology CAD (electronics); NBTI; TCAD numerical simulations; bias conditions; energy level; energy oxide trap distribution; negative bias temperature instability stress; oxide/channel interface; p-channel power U-MOSFET; recovery phase; silicon bandgap; Energy states; Logic gates; MOSFET; Silicon; Stress; Temperature measurement; Threshold voltage; Negative bias temperature instability; TCAD simulations; U-MOSFET; oxide charge trapping/de-trapping; recovery mechanisms; stress/recovery conditions;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123412
