Title :
650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric
Author :
Mengyuan Hua ; Cheng Liu ; Shu Yang ; Shenghou Liu ; Yunyou Lu ; Kai Fu ; Zhihua Dong ; Yong Cai ; Baoshun Zhang ; Chen, Kevin J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
In this work, silicon nitride (SiNx) film deposited at 780 °C by low pressure chemical vapor deposition (LPCVD) was employed as the passivation layer and gate dielectric for GaN-based MIS-HEMTs. The LPCVD-SiNx/AlGaN/GaN MIS-HEMTs exhibit suppressed current collapse, small gate leakage current at both reverse and forward gate bias, high forward gate breakdown voltage and high time dependent gate dielectric reliability.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; dielectric thin films; gallium compounds; high electron mobility transistors; leakage currents; passivation; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; LPCVD-SiNx; MIS-HEMT; SiNx-AlGaN-GaN; forward gate bias; high forward gate breakdown voltage; high time dependent gate dielectric reliability; low pressure chemical vapor deposition; passivation layer; reverse gate bias; silicon nitride film; small gate leakage current; suppressed current collapse; temperature 780 C; voltage 650 V; Aluminum gallium nitride; Dielectrics; Gallium nitride; Leakage currents; Logic gates; Passivation; Wide band gap semiconductors; MIS-HEMT; galicum nitride; gate dielectric; passivation; silicon nitride;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123434
