DocumentCode :
712871
Title :
Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT
Author :
Lehmann, J. ; Leroux, C. ; Charles, M. ; Torres, A. ; Morvan, E. ; Reimbold, G. ; Bano, E. ; Ghibaudo, G.
Author_Institution :
Univ. Grenoble Alpes, Grenoble, France
fYear :
2015
fDate :
10-14 May 2015
Firstpage :
261
Lastpage :
264
Abstract :
In order to optimize the Ron, we have studied the influence of epitaxy and fluorine based Si3N4 etching on the 2DEG properties of AlGaN/GaN HEMT.
Keywords :
aluminium compounds; epitaxial growth; gallium compounds; high electron mobility transistors; silicon; 2DEG properties; AlGaN-GaN; HEMT; Ron resistance; epitaxy; etching; fluorine; gate deposition process; Aluminum gallium nitride; Aluminum nitride; Etching; III-V semiconductor materials; Logic gates; Wide band gap semiconductors; AlGaN/GaN HeMT; Ron; epitaxy; fluorine; power transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
ISSN :
1943-653X
Print_ISBN :
978-1-4799-6259-4
Type :
conf
DOI :
10.1109/ISPSD.2015.7123439
Filename :
7123439
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=712871
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