• DocumentCode
    712871
  • Title

    Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT

  • Author

    Lehmann, J. ; Leroux, C. ; Charles, M. ; Torres, A. ; Morvan, E. ; Reimbold, G. ; Bano, E. ; Ghibaudo, G.

  • Author_Institution
    Univ. Grenoble Alpes, Grenoble, France
  • fYear
    2015
  • fDate
    10-14 May 2015
  • Firstpage
    261
  • Lastpage
    264
  • Abstract
    In order to optimize the Ron, we have studied the influence of epitaxy and fluorine based Si3N4 etching on the 2DEG properties of AlGaN/GaN HEMT.
  • Keywords
    aluminium compounds; epitaxial growth; gallium compounds; high electron mobility transistors; silicon; 2DEG properties; AlGaN-GaN; HEMT; Ron resistance; epitaxy; etching; fluorine; gate deposition process; Aluminum gallium nitride; Aluminum nitride; Etching; III-V semiconductor materials; Logic gates; Wide band gap semiconductors; AlGaN/GaN HeMT; Ron; epitaxy; fluorine; power transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
  • Conference_Location
    Hong Kong
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4799-6259-4
  • Type

    conf

  • DOI
    10.1109/ISPSD.2015.7123439
  • Filename
    7123439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=712871