22 kV SiC Emitter turn-off (ETO) thyristor and its dynamic performance including SOA

Ultra-high voltage (>10 kV) power devices based on SiC are gaining significant attentions since Si power devices are typically at lower voltage levels. In this paper, a world record 22kV Silicon Carbide (SiC) p-type ETO thyristor is developed and reported as a promising candidate for ultra-high voltage applications. The device is based on a 2cm² 22kV p type gate turn off thyristor (p-GTO) structure. Its static as well as dynamic performances are analyzed, including the anode to cathode blocking characteristics, forward conduction characteristics at different temperatures, turn-on and turn-off dynamic performances. The turn-off energy at 6kV, 7kV and 8kV respectively is also presented. In addition, theoretical boundary of the reverse biased safe operation area (RBSOA) of the 22kV SiC ETO is obtained by simulations and the experimental test also demonstrated a wide RBSOA.