A modeling and experimental method for accurate thermal analysis of AlGaN/GaN powerbars

Author

Sodan, Vice ; Stoffels, Steve ; Oprins, Herman ; Baelmans, Martine ; Decoutere, Stefaan ; De Wolf, Ingrid

Author_Institution

IMEC, Leuven, Belgium

fYear

2015

fDate

10-14 May 2015

Firstpage

377

Lastpage

380

Abstract

In this work we present a novel and comprehensive method for thermal characterization of GaN based transistors. By means of two coupled simulations (TCAD and FEM) a detailed insight into the device physics has been provided whereas an experimental method (low-RF drain conductance measurement) is recognized as a simple and accurate method for a full transient analysis of the transistors. The method (modeling and experiments) has been performed on several different GaN based transistors where a good agreement between the simulations and experiments is obtained.

Keywords

III-V semiconductors; finite element analysis; gallium compounds; high electron mobility transistors; semiconductor device measurement; semiconductor device models; thermal analysis; transient analysis; wide band gap semiconductors; AlGaN-GaN; FEM; GaN based transistors; HEMT; TCAD; coupled simulations; device physics; full transient analysis; high electron mobility transistor; low-RF drain conductance measurement; powerbars; thermal analysis; thermal characterization; Frequency measurement; Gallium nitride; HEMTs; Impedance; Temperature measurement; Thermal analysis; finite element analysis; gallium nitride; high electron mobility transistor (HEMT); power dissipation; self-heating effect (SHE); thermal analysis; thermal impedance;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123468

Filename

7123468