A novel trench shielded MOSFET with buried field ring for tunable switching and improved ruggedness

Author

Lingpeng Guan ; Bobde, Madhur ; Padmanabhan, Karthik ; Yilmaz, Hamza ; Bhalla, Anup ; Lei Zhang ; Chiu, Allan ; Jongoh Kim ; Wenjun Li

Author_Institution

Alpha & Omega Semicond., Sunnyvale, CA, USA

fYear

2015

fDate

10-14 May 2015

Firstpage

401

Lastpage

404

Abstract

In this paper, a novel trench shielded 600V MOSFET with buried field ring is proposed and demonstrated. The proposed structure achieves an active area die shrink of 35-55% compared to a conventional 600V planar MOSFET. Furthermore, it almost doubles the Unclamped Inductive Switching (UIS) rated current and improves 0.3% of the efficiency compared to the Superjunction device. It also shows better diode reverse recovery performance than Superjunction device.

Keywords

MOSFET; UIS rated current; active area die; buried field ring; diode reverse recovery performance; planar MOSFET; superjunction device; trench shielded MOSFET; tunable switching; unclamped inductive switching; voltage 600 V; Electrodes; Electromagnetic interference; Integrated circuits; Logic gates; MOSFET; Power semiconductor devices; Switches; Efficiency; High Voltage; MOSFET; Superjunction; Trench; UIS;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123474

Filename

7123474