Title :
A novel trench shielded MOSFET with buried field ring for tunable switching and improved ruggedness
Author :
Lingpeng Guan ; Bobde, Madhur ; Padmanabhan, Karthik ; Yilmaz, Hamza ; Bhalla, Anup ; Lei Zhang ; Chiu, Allan ; Jongoh Kim ; Wenjun Li
Author_Institution :
Alpha & Omega Semicond., Sunnyvale, CA, USA
Abstract :
In this paper, a novel trench shielded 600V MOSFET with buried field ring is proposed and demonstrated. The proposed structure achieves an active area die shrink of 35-55% compared to a conventional 600V planar MOSFET. Furthermore, it almost doubles the Unclamped Inductive Switching (UIS) rated current and improves 0.3% of the efficiency compared to the Superjunction device. It also shows better diode reverse recovery performance than Superjunction device.
Keywords :
MOSFET; UIS rated current; active area die; buried field ring; diode reverse recovery performance; planar MOSFET; superjunction device; trench shielded MOSFET; tunable switching; unclamped inductive switching; voltage 600 V; Electrodes; Electromagnetic interference; Integrated circuits; Logic gates; MOSFET; Power semiconductor devices; Switches; Efficiency; High Voltage; MOSFET; Superjunction; Trench; UIS;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123474
