Title :
Measuring complex for analysis of recombination deep traps in semiconductor solar cells
Author :
Litvinov, Vladimir G. ; Vishnyakov, Nikolay V. ; Gudzev, Valery V. ; Mishustin, Vladislav G. ; Karabanov, Sergey M. ; Vikhrov, Sergey P. ; Karabanov, Andrey S.
Author_Institution :
Dept. of Biomed. & Semicond. Electron., Ryazan State Radio Eng. Univ., Ryazan, Russia
Abstract :
Measuring complex for analysis of recombination deep traps in semiconductor solar cells based on the I-DLTS is described. Measuring complex can be used in the industry of semiconductor solar cells where is necessary to control deep traps concentration and required level of conversion efficiency and quality of solar cells.
Keywords :
electron traps; electron-hole recombination; hole traps; photoelectric devices; solar cells; I-DLTS; measuring complex; recombination deep trap analysis; semiconductor solar cells; Conductivity; Current measurement; Photovoltaic cells; Radiative recombination; Semiconductor device measurement; Temperature measurement; Transient analysis; DLTS; I-DLTS; deep level; semiconductor; solar cell; trap;
Conference_Titel :
Industrial Technology (ICIT), 2015 IEEE International Conference on
Conference_Location :
Seville
DOI :
10.1109/ICIT.2015.7125239
