• DocumentCode
    714050
  • Title

    A self-healing technique using ZTC biasing for PVT variations compensation in 65nm CMOS technology

  • Author

    Nateghi, Hamidreza ; El-Sankary, Kamal

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada
  • fYear
    2015
  • fDate
    3-6 May 2015
  • Firstpage
    128
  • Lastpage
    131
  • Abstract
    This paper presents a self-healing technique for current sources to compensate process, supply voltage and temperature variations in 65nm CMOS technology. The proposed circuit utilizes transistor Self-Heating in order to bias current source MOSFET in the vicinity of Zero Temperature Coefficient (ZTC). The ZTC point existence in 65nm scale has been proven to exist below the nominal voltage supply. A circuit level modeling of the effect of self-heating and current change with temperature is proposed in this work to allow the simulation of the circuit using transient analysis in Spectre simulator environment. The effectiveness of the self-healed current source is tested in two common analog and digital applications. Simulation results show significant PVT compensation and improvement in circuit performance.
  • Keywords
    CMOS integrated circuits; MOSFET; CMOS technology; PVT variations compensation; ZTC biasing; bias current source MOSFET; circuit level modeling; circuit performance improvement; common analog applications; current change; digital applications; nominal voltage supply; self-healing technique; size 65 nm; temperature variations; transient analysis; zero temperature coefficient; CMOS integrated circuits; Integrated circuit modeling; MOSFET; Mathematical model; Simulation; Temperature sensors; Closed-Loop Self-Healing; Process Degeneration; Self-Heating; Temperature Compensation; Voltage Compensation; Zero Temperature Coefficient;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering (CCECE), 2015 IEEE 28th Canadian Conference on
  • Conference_Location
    Halifax, NS
  • ISSN
    0840-7789
  • Print_ISBN
    978-1-4799-5827-6
  • Type

    conf

  • DOI
    10.1109/CCECE.2015.7129173
  • Filename
    7129173