Title :
30-GHz mHEMT divide-by-three injection-locked frequency divider with Marchand balun
Author :
Wei-Ling Chang ; Chinchun Meng ; Kuan-Chang Tsung ; Guo-Wei Huang
Author_Institution :
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, the first fully integrated 0.15-μm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) divide-by-three injection locked frequency divider (ILFD) with Marchand balun is demonstrated. The mHEMT technology has 110-GHz cutoff frequency and high tranconductance. Moreover, the Marchand Balun on the semi-insulating GaAs substrate has a low-loss property to provide broadband and balanced differential signals at millimeter wave frequencies. The divide-by-three ILFD performs the locking range from 28.8 GHz to 31.6 GHz under the supply voltage of 6 V and the core current consumption is 17.8 mA.
Keywords :
III-V semiconductors; aluminium compounds; baluns; frequency dividers; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave transistors; ILFD; InAlAs-InGaAs; Marchand balun; current 17.8 mA; current consumption; cutoff frequency; differential signal; divide-by-three injection-locked frequency divider; frequency 110 GHz; frequency 28.8 GHz to 31.6 GHz; frequency 30 GHz; mHEMT; metamorphic high electron mobility transistor; millimeter wave frequency; semi-insulating gallium arsenide substrate; size 0.15 mum; tranconductance; voltage 6 V; Frequency conversion; Gallium arsenide; Impedance matching; Indium gallium arsenide; Transconductance; mHEMTs; Divide-by-three injection locked frequency divider; InAlAs/InGaAs mHEMT; Marchand Balun;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2015 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/RWS.2015.7129713
