30-GHz mHEMT divide-by-three injection-locked frequency divider with Marchand balun

In this paper, the first fully integrated 0.15-μm InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) divide-by-three injection locked frequency divider (ILFD) with Marchand balun is demonstrated. The mHEMT technology has 110-GHz cutoff frequency and high tranconductance. Moreover, the Marchand Balun on the semi-insulating GaAs substrate has a low-loss property to provide broadband and balanced differential signals at millimeter wave frequencies. The divide-by-three ILFD performs the locking range from 28.8 GHz to 31.6 GHz under the supply voltage of 6 V and the core current consumption is 17.8 mA.