Title :
A GaN HEMT N-path filter with +17 dBm jammer tolerance
Author :
Thomas, Chris M. ; Larson, Lawrence E.
Author_Institution :
MaXentric Technol., La Jolla, CA, USA
Abstract :
A GaN HEMT bandpass N-path filter is demonstrated for high jammer tolerance. Measurements from 50 MHz to 300 MHz of a series architecture implemented in hybrid form demonstrate a IP1dB of +10 dBm, IIP3 of +24.6 dBm, and a IP1dB out-of-band jammer tolerance of +17 dBm.
Keywords :
HEMT circuits; III-V semiconductors; band-pass filters; gallium compounds; jamming; GaN; GaN HEMT bandpass N-path filter; frequency 50 MHz to 300 MHz; hybrid form; jammer tolerance; Band-pass filters; Filtering theory; Gallium nitride; Insertion loss; Jamming; Optical filters; Power harmonic filters; Bandpass filter; GaN; N-path filtering; SAW-less; passive mixer;
Conference_Titel :
Radio and Wireless Symposium (RWS), 2015 IEEE
Conference_Location :
San Diego, CA
DOI :
10.1109/RWS.2015.7129742
