Highly Transparent Dysprosium Oxide-Based RRAM With Multilayer Graphene Electrode for Low-Power Nonvolatile Memory Application

A highly transparent resistive random access memory with a configuration of multilayer graphene (MLG)/Dy₂O₃/indium tin oxide (ITO) structure is demonstrated in this paper. The fabricated device is transparent, with 80% transmittance at 550 nm. The MLG/Dy₂O₃/ITO device shows unipolar resistance switching with a low operation current (<;100 μA), low operation voltage (<;1 V), low power consumption (<;100 μW), high resistance ratio (>10⁴), fast switching speed (<;60 ns), reliable data retention, and promising cycle endurance properties (>200 cycles), which makes a step toward the realization of low-power transparent electronics for next-generation nonvolatile memory application. The MLG/Dy₂O₃/ITO device exhibited typical filamentary-conduction-type resistive random access memory behavior and no forming process is required. High resistance state (HRS) increases with a reduced device area while low resistance state (LRS) is insensitive to the device sizes. Moreover, Raman spectra obtained in pristine state, HRS, and LRS indicate that the lower power consumption of MLG/Dy₂O₃/ITO device is attributable to the formation of oxygen graphene layers.