Title :
European gallium nitride capability
Author :
Martin, Kevin N.
Author_Institution :
Sensors & Countermeasures Dept, Dstl, Salisbury, UK
Abstract :
Gallium nitride (GaN) provides clear advantages over other technologies such as gallium arsenide (GaAs) for high power solid state radio frequency (RF) applications. However Europe is currently reliant on other countries, in particular the US, for GaN components and systems. This paper summarises recent research into GaN within Europe and the progress towards establishing an independent European supply chain.
Keywords :
gallium compounds; semiconductor device manufacture; supply chains; GaN; RF applications; gallium nitride; high power solid state radio frequency; independent European supply chain; Epitaxial growth; Europe; Gallium nitride; HEMTs; Silicon carbide; Substrates; Wide band gap semiconductors; GaN devices; GaN epitaxy; GaN supply chain; gallium nitride; silicon carbide;
Conference_Titel :
Radar Conference (RadarCon), 2015 IEEE
Conference_Location :
Arlington, VA
Print_ISBN :
978-1-4799-8231-8
DOI :
10.1109/RADAR.2015.7131004
