Title :
High-volume-manufacturing (HVM) of BVA™ enabled advanced package-on-package (PoP)
Author :
Katkar, Rajesh ; Prabhu, Ashok ; Co, Rey ; Zohni, Wael
Author_Institution :
Invensas Corp., San Jose, CA, USA
Abstract :
Bond-Via-Array (BVA™) technology has been developed to address the high density interconnect requirements of the next generation of package-on-package (PoP) solutions. This technology, while utilizing conventional assembly processes and equipment, can provide more than 1000 interconnections between the memory and the logic packages when stacked in a PoP format within a standard PoP package footprint. The vertical interconnections are achieved by utilizing well established wire-bond equipment and processes. An array of free-standing wire-bonds is formed along the periphery of the logic package to form electrical connections to the topside memory package. In this paper, key assembly process steps including free standing vertical wire-bond formation, film assist molding and fine-pitch PoP stacking will be described along with the results from manufacturing and reliability studies conducted in cooperation with 3rd party equipment vendors to validate HVM readiness.
Keywords :
assembling; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; integrated memory circuits; lead bonding; logic circuits; BVA technology; HVM readiness; PoP format; advanced package-on-package; assembly process; bond-via-array technology; electrical connections; film assist molding; fine-pitch PoP stacking; free-standing vertical wire-bond formation; free-standing wire-bond array; high-density interconnect requirements; high-volume-manufacturing; logic package periphery; next generation PoP solution; reliability study; standard PoP package footprint; topside memory package; vertical interconnections; wire-bond equipment; wire-bond process; Assembly; Films; Reliability; Standards; Substrates; Testing; Wires; Bond Via Array; High Bandwidth; Mobile; Package on Package; Wide IO;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131943