AlGaInP-based LEDs with ZnO nanostructures by successive ionic layer adsorption and reaction and hydrothermal methods

Author

Nan-Ming Lin ; Shih-Chang Shei ; Shoou-Jinn Chang

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan

fYear

2015

fDate

4-6 May 2015

Firstpage

1

Lastpage

3

Abstract

The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanostructures for AlGaInP-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 2.0 V when the 20mA output powers were 0.41, 0.53, 0.56, 0.60, and 0.50 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of the ZnO nanostructure on the top of GaP surface did not degrade the electrical properties.

Keywords

III-V semiconductors; LED displays; adsorption; aluminium compounds; gallium compounds; indium compounds; nanostructured materials; wide band gap semiconductors; zinc compounds; AlGaInP; Hm methods; LED I; LED II; LED III; LED IV; LED V; SILAR; ZnO; current 20 mA; current injection; electrical properties; forward voltages; hydrothermal methods; light-emitting diodes; nanostructures; power 0.41 mW; power 0.50 mW; power 0.53 mW; power 0.56 mW; power 0.60 mW; successive ionic layer adsorption and reaction; voltage 2.0 V; Adsorption; II-VI semiconductor materials; Light emitting diodes; Nanostructures; Power generation; Surface treatment; Zinc oxide; AlGaInP; ZnO; light-emitting diodes (LEDs); nanostructure;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2015 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/ISNE.2015.7131953

Filename

7131953