A study of subthreshold behavior of short-channel junctionless cylindrical surrounding-gate MOSFETs from an electrostatic potential viewpoint

Author

Chunsheng Jiang ; Renrong Liang ; Jing Wang ; Jun Xu

Author_Institution

Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China

fYear

2015

fDate

4-6 May 2015

Firstpage

1

Lastpage

4

Abstract

An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on a method of series expansion similar to Green´s function. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide thickness, drain voltage, and gate voltage. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performance.

Keywords

Green´s function methods; MOSFET; Poisson equation; electrostatics; numerical analysis; semiconductor device models; semiconductor doping; 2D Poisson equation; 3D numerical simulator; Green´s function; channel thickness; doping concentration; drain voltage; electrostatic potential model; gate length; gate oxide thickness; gate voltage; nanoscale JLCSG MOSFET; short-channel junctionless cylindrical surrounding-gate MOSFET; subthreshold behavior; Analytical models; Electric potential; Electrostatics; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Green´s function; junctionless cylindrical surrounding-gate MOSFETs; subthreshold behavior;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2015 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/ISNE.2015.7131955

Filename

7131955