DocumentCode :
715183
Title :
An 8×1k SPAD detector with TDI in 0.13μm CMOS technology
Author :
Lixia Dong ; Dong Wu ; Jun Zhou
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear :
2015
fDate :
4-6 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
A wider variety of practical applications employ single photon avalanche diode (SPAD) operating in Geiger mode to detect the extremely weak optical signal due to many advantages, such as higher avalanche gain and faster response speed. In this paper, we report a high-performance linear scan SPAD detector with time delay integration (TDI) to enhance the dynamic range and signal to noise ratio (SNR). The detector is fabricated in 0.13μm CMOS technology and it comprises an array of 8×1k SPAD pixels, quenching circuits, readout modules and other necessary peripheral circuits.
Keywords :
CMOS integrated circuits; avalanche photodiodes; delays; CMOS technology; Geiger mode; TDI; extremely weak optical signal; linear scan SPAD detector; quenching circuits; readout modules; signal to noise ratio; single photon avalanche diode; size 0.13 mum; time delay integration; Arrays; CMOS integrated circuits; CMOS technology; Detectors; Junctions; Layout; Photonics; quenching circuit; single photon avalanche diode; time delay integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
Type :
conf
DOI :
10.1109/ISNE.2015.7131959
Filename :
7131959
Link To Document :
بازگشت