An 8×1k SPAD detector with TDI in 0.13μm CMOS technology

Author

Lixia Dong ; Dong Wu ; Jun Zhou

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2015

fDate

4-6 May 2015

Firstpage

1

Lastpage

2

Abstract

A wider variety of practical applications employ single photon avalanche diode (SPAD) operating in Geiger mode to detect the extremely weak optical signal due to many advantages, such as higher avalanche gain and faster response speed. In this paper, we report a high-performance linear scan SPAD detector with time delay integration (TDI) to enhance the dynamic range and signal to noise ratio (SNR). The detector is fabricated in 0.13μm CMOS technology and it comprises an array of 8×1k SPAD pixels, quenching circuits, readout modules and other necessary peripheral circuits.

Keywords

CMOS integrated circuits; avalanche photodiodes; delays; CMOS technology; Geiger mode; TDI; extremely weak optical signal; linear scan SPAD detector; quenching circuits; readout modules; signal to noise ratio; single photon avalanche diode; size 0.13 mum; time delay integration; Arrays; CMOS integrated circuits; CMOS technology; Detectors; Junctions; Layout; Photonics; quenching circuit; single photon avalanche diode; time delay integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2015 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/ISNE.2015.7131959

Filename

7131959