DocumentCode :
715198
Title :
Electrical study of indium doped magnesium zinc oxide by spray pyrolysis
Author :
TzuYang Lin ; WeiHsuan Hsu ; ChunYi Lee ; ShengChung Huang ; YuXuan Ding ; WenHow Lan ; MingChang Shih
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
fYear :
2015
fDate :
4-6 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
The undoped and indium doped magnesium zinc oxide was prepared by spray pyrolysis with magnesium nitrate, zinc acetate and indium nitrate precursors. For undoped thin film, the photolumescence spectrum shows the blue shift behavior with the increasing of deposition temperature. The near band edge emission with peak wavelength 365nm for magnesium znic oxide can be observed. With the increasing of indium nitrate, the film resistivity, concentration and mobility were measured. The N-type conduction with concentration around 8×1018cm-3 can be characterized.
Keywords :
II-VI semiconductors; electrical resistivity; indium; magnesium compounds; photoluminescence; pyrolysis; semiconductor thin films; spectral line shift; zinc compounds; MgZnO:In; N-type conduction; blue shift behavior; electrical resistivity; film mobility; indium doped magnesium zinc oxide; indium nitrate precursors; magnesium nitrate; near band edge emission; photolumescence spectrum; spray pyrolysis; undoped thin film; zinc acetate; Conductivity; Films; Indium; Magnesium; Photonic band gap; Temperature measurement; Zinc oxide; MgZnO; indium; photolumescence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
Type :
conf
DOI :
10.1109/ISNE.2015.7131975
Filename :
7131975
Link To Document :
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