Electrical study of indium doped magnesium zinc oxide by spray pyrolysis

Author

TzuYang Lin ; WeiHsuan Hsu ; ChunYi Lee ; ShengChung Huang ; YuXuan Ding ; WenHow Lan ; MingChang Shih

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan

fYear

2015

fDate

4-6 May 2015

Firstpage

1

Lastpage

2

Abstract

The undoped and indium doped magnesium zinc oxide was prepared by spray pyrolysis with magnesium nitrate, zinc acetate and indium nitrate precursors. For undoped thin film, the photolumescence spectrum shows the blue shift behavior with the increasing of deposition temperature. The near band edge emission with peak wavelength 365nm for magnesium znic oxide can be observed. With the increasing of indium nitrate, the film resistivity, concentration and mobility were measured. The N-type conduction with concentration around 8×10¹⁸cm^-3 can be characterized.

Keywords

II-VI semiconductors; electrical resistivity; indium; magnesium compounds; photoluminescence; pyrolysis; semiconductor thin films; spectral line shift; zinc compounds; MgZnO:In; N-type conduction; blue shift behavior; electrical resistivity; film mobility; indium doped magnesium zinc oxide; indium nitrate precursors; magnesium nitrate; near band edge emission; photolumescence spectrum; spray pyrolysis; undoped thin film; zinc acetate; Conductivity; Films; Indium; Magnesium; Photonic band gap; Temperature measurement; Zinc oxide; MgZnO; indium; photolumescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2015 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/ISNE.2015.7131975

Filename

7131975