Title :
Heating stress probing electrical performance of multiple N-channel FinFETs with VT doping energies
Author :
Mu-Chun Wang ; Jian-Liang Lin ; Shao-Syuan Syu ; Wen-Shiang Liao ; Wen-How Lan ; Shea-Jue Wang
Author_Institution :
Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan
Abstract :
Higher threshold-voltage (VT) doping energy provides the deeper influence to channel controllability. For drive current (IDS) consideration, the higher one demonstrates the larger IDS value, but the higher drop ratio at 125°C comparing the measurement results at channel width/channel length (W/L)=0.11/0.5(μm/μm). However, this phenomenon at W/L=0.11/2(μm/μm) is not distinct at room temperature and the drop ratio at higher doping energy process is converse at higher temperature stress.
Keywords :
MOSFET; semiconductor device measurement; semiconductor doping; thermal stresses; channel controllability; channel length; channel width; drive current; heating stress probing electrical performance; multiple N-channel FinFET; temperature 125 degC; temperature stress; threshold-voltage doping energy; Controllability; Doping; FinFETs; Heating; Stress; Temperature; FinFET; doping energy; drive current; swing; temperature;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131980
