GaN-based LEDs with flower shape ZnO nanorods by SILAR-based and hydrothermal methods

Author

Nan-Ming Lin ; Shih-Chang Shei ; Shoou-Jinn Chang

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan

fYear

2015

fDate

4-6 May 2015

Firstpage

1

Lastpage

3

Abstract

The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanorods with the flower shape for GaN-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 3.4 V when the 20mA output powers were 2.36, 2.69, 3.04, 3.24, and 3.0 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of ZnO nanorods on the top of ITO surface did not degrade the electrical properties.

Keywords

II-VI semiconductors; III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanorods; tin compounds; wide band gap semiconductors; zinc compounds; GaN; Hm methods; ITO surface; InSnO₂; LED; SILAR; ZnO; ZnO nanorods; current 20 mA; flower shape nanorods; hydrothermal methods; light-emitting diodes; power 2.36 mW; power 2.69 mW; power 3.0 mW; power 3.04 mW; power 3.24 mW; successive ionic layer adsorption and reaction; voltage 3.4 V; Gallium nitride; II-VI semiconductor materials; Indium tin oxide; Light emitting diodes; Power generation; Rough surfaces; Zinc oxide; LEDs; SILAR; hydrothermal; nanorods;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2015 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/ISNE.2015.7131991

Filename

7131991