DocumentCode :
715210
Title :
All silicon rich silicon carbide based solar cell
Author :
Chih-Hsien Cheng ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2015
fDate :
4-6 May 2015
Firstpage :
1
Lastpage :
3
Abstract :
All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH4]/[CH4+SiH4] fluence ratio of 50%, the i-SixC1-x layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×105 cm-1. The open-circuit voltage and short-circuit current of the Si-rich Si0.67C0.33/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm2 with the conversion efficiency and filling factor to 5.51% and 27%, respectively.
Keywords :
elemental semiconductors; plasma CVD; silicon compounds; solar cells; PECVD; PVSC; SiC; open-circuit voltage; photovoltaic solar cells; short-circuit current; silicon rich silicon carbide based solar cell; visible light region; Absorption; Films; Photovoltaic cells; Photovoltaic systems; Silicon; Silicon carbide; Si-rich SixC1−x; single photovoltaic solar cell; tandem photovoltaic solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
Type :
conf
DOI :
10.1109/ISNE.2015.7131992
Filename :
7131992
Link To Document :
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