• DocumentCode
    715214
  • Title

    Study of SiOx-based resistive switching memory (ReRAM) in integrated one diode — One resistor (1D-1R) architecture

  • Author

    Yao-Feng Chang ; Fowler, Burt ; Fei Zhou ; Lee, Jack C.

  • Author_Institution
    Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2015
  • fDate
    4-6 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, one diode-one resistor (1D-1R) SiOx-based resistive switching (RS) elements were fabricated using PN Si diode as a selector to eliminate sneak-path issues. Our work and results include: 1) demonstrating sub-μs pulsed programming; 2) rectification ratio > 106 (meeting ITRS roadmap criteria) for integrated 1D-1R cross-bar arrays; 3) multi-bit operation; 4) 106 endurance cycles; and 5) robust read/write disturbance immunity for unselected cells in 16×16 1D-1R arrays.
  • Keywords
    memory architecture; resistive RAM; silicon compounds; 1D-1R architecture; PN silicon diode; ReRAM; SiOx; one diode-one resistor architecture; read/write disturbance immunity; rectification ratio; resistive switching elements; resistive switching memory; sub-μs pulsed programming; Metals; Optical switches; Optimization; Programming; Semiconductor diodes; Silicon; 1D-1R; ReRAM; SiOx; unipolar;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2015 International Symposium on
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/ISNE.2015.7131996
  • Filename
    7131996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=715214