DocumentCode :
715217
Title :
Composition ratio dependent refractive index and optical bandgap of nonstoichiometric Si1−xGex on silicon
Author :
Bo-Ji Huang ; Chung-Lun Wu ; Yung-Hsiang Lin ; Po-Han Chang ; Chih-I Wu ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2015
fDate :
4-6 May 2015
Firstpage :
1
Lastpage :
3
Abstract :
Nonstoichiometric Si1-xGex films fabricated by plasma enhanced chemical vapor deposition (PECVD) with different flounce ratios are demonstrated to show the composition ratio dependent optical properties, including refractive index, bandgap and optical absorption. By increasing the fluence ratio from 0.2 to 0.5, the refractive index of Si1-xGex film raises from 3.527 to 3.927, with the absorption coefficient enlarging from <;<;1cm-1 to 31.12 cm-1.
Keywords :
Ge-Si alloys; energy gap; plasma CVD; refractive index; semiconductor thin films; PECVD; Si1-xGex; composition ratio dependent refractive index; flounce ratios; nonstoichiometric films; optical absorption; optical bandgap; plasma enhanced chemical vapor deposition; Nonlinear optics; Optical device fabrication; Optical films; Optical refraction; Optical variables control; Refractive index; SiGe; optical bandgap; refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
Type :
conf
DOI :
10.1109/ISNE.2015.7132002
Filename :
7132002
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=715217
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