DocumentCode :
715222
Title :
Simulation of charge collection probability in GaAs and Si solar cells from external quantum efficiency
Author :
Shih-Li Lin ; Hung-Ruei Tseng ; Shun-Chieh Hsu ; Yin-Han Chen ; Chien-Chung Lin
Author_Institution :
Coll. of Photonics, Nat. Chiao-Tung Univ., Tainan, Taiwan
fYear :
2015
fDate :
4-6 May 2015
Firstpage :
1
Lastpage :
4
Abstract :
The charge collection probability is one of the most important parameters of a solar cell. We derived two kinds of special functions to fit the external quantum efficiency and use then to reconstruct the charge collection probability. The simulation results of gallium arsenide and silicon solar cells are put into comparison.
Keywords :
elemental semiconductors; gallium arsenide; probability; silicon; solar cells; charge collection probability simulation; external quantum efficiency; gallium arsenide; silicon solar cells; Absorption; Fitting; Gallium arsenide; Mathematical model; Photovoltaic cells; Physics; Silicon; Galluim Arsenide; MATLAB®; Silicon; charge collection probability; photovoltaic cells; simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
Type :
conf
DOI :
10.1109/ISNE.2015.7132009
Filename :
7132009
Link To Document :
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