Title :
Antireflection and high absorption coefficient nano-porous tin sulfides
Author :
Chih-Hsien Cheng ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The self-organized two dimensional (2D) honeycomb-like tin sulfide (SnS) nano-porous structure with high absorption and depolarization features is solid-phase synthesis by RF sputtering. The high absorption coefficient up to 105 cm-1 for planar and nano-porous SnS is enlarged and red-shifted absorption bandedge from 1.43 and 1.16, and the absorption coefficient band edge is increasing to the higher wavelength from 450 to 570 nm.
Keywords :
IV-VI semiconductors; absorption coefficients; dielectric depolarisation; nanofabrication; nanoporous materials; red shift; self-assembly; sputter deposition; tin compounds; RF sputtering; SnS; antireflection coefficient; depolarization; high absorption coefficient; nanoporous tin sulfides; red-shifted absorption bandedge; solid-phase synthesis; two-dimensional honeycomb-like tin sulfide nanoporous structure; Absorption; Optical device fabrication; Optical films; Optical reflection; Photonic band gap; Reflectivity; SnS; antireflection; nano-porous structure;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7132010
