• DocumentCode
    715223
  • Title

    Antireflection and high absorption coefficient nano-porous tin sulfides

  • Author

    Chih-Hsien Cheng ; Gong-Ru Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2015
  • fDate
    4-6 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The self-organized two dimensional (2D) honeycomb-like tin sulfide (SnS) nano-porous structure with high absorption and depolarization features is solid-phase synthesis by RF sputtering. The high absorption coefficient up to 105 cm-1 for planar and nano-porous SnS is enlarged and red-shifted absorption bandedge from 1.43 and 1.16, and the absorption coefficient band edge is increasing to the higher wavelength from 450 to 570 nm.
  • Keywords
    IV-VI semiconductors; absorption coefficients; dielectric depolarisation; nanofabrication; nanoporous materials; red shift; self-assembly; sputter deposition; tin compounds; RF sputtering; SnS; antireflection coefficient; depolarization; high absorption coefficient; nanoporous tin sulfides; red-shifted absorption bandedge; solid-phase synthesis; two-dimensional honeycomb-like tin sulfide nanoporous structure; Absorption; Optical device fabrication; Optical films; Optical reflection; Photonic band gap; Reflectivity; SnS; antireflection; nano-porous structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2015 International Symposium on
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/ISNE.2015.7132010
  • Filename
    7132010