Title :
Low-temperature direct wafer bonding for III-V compound semiconductors to nanometer-scale grating arrays
Author :
Bai-Ci Chen ; Yu-Chang Wu ; Jen-Hung Huang ; Hao-Chung Kuo ; Chien-Chung Lin
Author_Institution :
Inst. of Photonic Syst., Nat. Chiao-Tung Univ., Tainan, Taiwan
Abstract :
In this paper, we designed the grating with different periodicities on silicon. Aluminum or silicon dioxide would be filled in the inter-space of grating. Besides, the surface reflectivity of different structures was measured and the theoretical calculation was performed. By oxygen plasma-enhanced process, we successfully present the results of a low-temperature process for direct bonding of InP epitaxial layers on a silicon wafer.
Keywords :
III-V semiconductors; aluminium; epitaxial layers; low-temperature techniques; nanoelectronics; oxygen; plasma deposition; silicon compounds; wafer bonding; Al; III-V compound semiconductors; O2; SiO2; aluminum; epitaxial layers; low-temperature direct wafer bonding; low-temperature process; nanometer-scale grating arrays; oxygen plasma-enhanced process; silicon dioxide; silicon wafer; surface reflectivity; Aluminum; Bonding; Gratings; Optical surface waves; Photonics; Reflectivity; Silicon; FDTD simulation; Grating; Surface reflectivity; Wafer bonding;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7132038
