• DocumentCode
    715246
  • Title

    Fast and low-temperature sputtering epitaxy of Si and Ge and its application to optoelectronics

  • Author

    Wenchang Yeh ; Matsumoto, Motohiro ; Sugihara, Keisuke

  • Author_Institution
    Interdiscipl. Grad. Sch. of Sci. & Eng., Shimane Univ., Matsue, Japan
  • fYear
    2015
  • fDate
    4-6 May 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Novel Si/SiGex-Ge multi-junction solar cell structure was proposed, and pin junction Ge solar cell was fabricated on Ge substrate by sputter epitaxy for the first time, in which growth temperature was under 360°C and growth rates was ~2 nm/s. Internal quantum efficiency at infrared wavelength was as high as 76%, with an open circuit voltage of 0.15V.
  • Keywords
    elemental semiconductors; epitaxial growth; p-i-n photodiodes; solar cells; sputtering; germanium substrate; growth rates; growth temperature; infrared wavelength; internal quantum efficiency; low-temperature sputtering epitaxy; open circuit voltage; optoelectronics; photo diode; pin junction germanium solar cell; silicon germanium multijunction solar cell structure; silicon multijunction solar cell structure; temperature 360 degC; voltage 0.15 V; Cathodes; Epitaxial growth; Photovoltaic cells; Silicon; Sputtering; Substrates; Germanium; Photo diode; Solar cell; Sputter epitaxy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2015 International Symposium on
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/ISNE.2015.7132040
  • Filename
    7132040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=715246