Title :
GeSn waveguide photodetectors fabricated by rapid-melt-growth method
Author :
Chih-Kuo Tseng ; Ching-Hsiang Chiu ; Shih-Che Yen ; Kuang-Chien Hsieh ; Neil Na ; Ming-Chang Lee
Author_Institution :
Inst. of Photonics Technol., Nat. Tsing-Hua Univ., Hsinchu, Taiwan
Abstract :
A GeSn metal-semiconductor-metal (MSM) photodetector is fabricated on a silicon-on-insulator (SOI) waveguide by rapid melt growth method. The Sn concentration of the GeSn photodetector is 2 % and shows a larger photo-responsivity by comparing with a pure Ge photodetector at long wavelength. The dark current is 3.7e-7 A at 5.4 V and the operation speed can be as high as 6.2 GHz.
Keywords :
dark conductivity; germanium alloys; melt processing; metal-semiconductor-metal structures; optical waveguides; photodetectors; tin alloys; GeSn; Si; Sn concentration; current 0.00000037 A; dark current; metal-semiconductor-metal photodetector; operation speed; photo-responsivity; rapid-melt-growth method; silicon-on-insulator waveguide; voltage 5.4 V; waveguide photodetectors; Absorption; Optical waveguides; Photodetectors; Silicon; Strips; Tin; Germanium-tin photodetectors; Si waveguide detectors; metal-semiconductor-metal photodetectors;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7132044
