Title :
UHF SiGe push-pull VCO MEMS oscillators
Author :
Yoon, Y.J. ; Moyer, H.P. ; Kirby, D.J. ; Kubena, R.L. ; Joyce, R.J. ; Bowen, R.L. ; Nguyen, H.D. ; Chang, D.T.
Author_Institution :
HRL Labs., LLC, Malibu, CA, USA
Abstract :
UHF quartz MEMS oscillators operating at 813 MHz, 920 MHz and 1.048 GHz carrier frequencies utilizing a push-pull topology based on MOSIS SiGe 7WL technology have been demonstrated. The 1048 MHz resonator has an unloaded Q of 6,920 and a motional resistance of 31.7 ohms, as measured in a vacuum. This yields an fxQ product of 7.25×1012, close to the expected limit for quartz devices of 1×1013. Device phase noise was measured showing a minimum phase noise of -100 dBc/Hz for an 813 MHz oscillator at 1 kHz offset. A tuning range of 80 ppm was demonstrated at 920 MHz.
Keywords :
Ge-Si alloys; UHF oscillators; circuit tuning; micromechanical resonators; phase noise; quartz; semiconductor materials; voltage-controlled oscillators; MOSIS SiGe 7WL technology; SiGe; SiO2; UHF quartz MEMS oscillators; frequency 813 MHz to 1.048 GHz; motional resistance; phase noise; push-pull topology; quartz devices; resonator; tuning range; vacuum; Phase noise; Resonant frequency; Springs; Tuning; Varactors; Voltage-controlled oscillators; MEMS; Oscillator; Phase noise; Push-pull; Quartz; Resonator; tuning;
Conference_Titel :
Frequency Control Symposium & the European Frequency and Time Forum (FCS), 2015 Joint Conference of the IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4799-8865-5
DOI :
10.1109/FCS.2015.7138795
