Title :
Gap reduction based frequency tuning for AlN capacitive-piezoelectric resonators
Author :
Schneider, Robert A. ; Thura Lin Naing ; Rocheleau, Tristan O. ; Nguyen, Clark T.-C
Author_Institution :
EECS Dept., Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
A voltage controlled resonance frequency tuning mechanism, capable of effecting 1,500 ppm frequency shifts or more, is demonstrated for the first time on an AlN capacitive-piezoelectric resonator. The key enabler here is a compliant top electrode suspension that moves with applied voltage to effectively vary capacitance in series with the device, hence changing its series resonance frequency. Capacitive-piezoelectric AlN micromechanical resonators, i.e., those with electrodes not directly attached to the piezoelectric material, already exhibit high Q-factors compared to attached-electrode counterparts, e.g., 8,800 versus 2,100 at 300 MHz; are on/off switchable; and, as shown in this work, can exhibit electromechanical coupling Cx=C0 of 1.0%. This new ability to tune frequency without the need for external components now invites the use of on-chip corrective schemes to improve accuracy or reduce temperature-induced frequency drift, making an even more compelling case to employ this technology for frequency control applications.
Keywords :
III-V semiconductors; aluminium compounds; crystal resonators; electrochemical electrodes; micromechanical resonators; piezoelectric materials; wide band gap semiconductors; AlN; Q-factor; attached-electrode suspension; capacitive-piezoelectric micromechanical resonator; electromechanical coupling; frequency 300 MHz; frequency control; frequency tuning; gap reduction; on-chip corrective scheme; piezoelectric material; temperature-induced frequency drift; voltage controlled resonance frequency tuning mechanism; Aluminum nitride; Capacitance; Electrodes; III-V semiconductor materials; Resonant frequency; Transducers; Tuning;
Conference_Titel :
Frequency Control Symposium & the European Frequency and Time Forum (FCS), 2015 Joint Conference of the IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4799-8865-5
DOI :
10.1109/FCS.2015.7138938