DocumentCode
716223
Title
A novel input matching topology for improved digital pre-distortion of RF power amplifiers
Author
Wilson, Richard ; Goel, Saurabh ; Singerl, Peter
Author_Institution
Infineon RF Power, Morgan Hill, CA, USA
fYear
2015
fDate
25-28 Jan. 2015
Firstpage
1
Lastpage
4
Abstract
Signal linearity is becoming an increasingly important requirement for the high power amplifiers used in current wireless communications systems. In this paper we demonstrate an input matching topology to improve the overall linearity performance of the base-station power amplifier. We then show simulation and measurement results using high-power laterally diffused metal oxide semiconductor (LDMOS) RF transistor and digital predistortion system for prototype design.
Keywords
MOSFET; radiofrequency power amplifiers; LDMOS RF transistor; RF power amplifiers; base-station amplifier; digital predistortion improvement; high power amplifiers; input matching topology; laterally diffused metal oxide semiconductor transistor; prototype design; signal linearity; wireless communications systems; Impedance; Impedance matching; Logic gates; Performance evaluation; Radio frequency; Topology; Transistors; Power Amplifiers; Predisortion;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Amplifiers for Wireless and Radio Applications (PAWR), 2015 IEEE Topical Conference on
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/PAWR.2015.7139193
Filename
7139193
Link To Document