DocumentCode :
71713
Title :
Address Scrambling and Data Inversion Techniques for Yield Enhancement of NROM-Based ROMs
Author :
Shyue-Kung Lu ; Tsu-Lin Li ; Hashizume, Masaki ; Jiann-Liang Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Volume :
64
Issue :
5
fYear :
2015
fDate :
May 1 2015
Firstpage :
1230
Lastpage :
1240
Abstract :
Address scrambling and data inversion techniques are proposed for yield enhancement of NROM-based ROMs in this paper. Besides using the conventional fault replacement techniques, fault masking effects are also exploited to further improve the fabrication yield and reduce the amount of extra spare rows/columns. That is, we consider the logical effects of physical defects when the customer´s code is to be programmed. A novel test and repair flow is also proposed. Based on the proposed techniques, possibilities of fault masking can be maximized. A row/column scrambling control word and a control column are used for the control of the scrambling techniques and the data inversion technique, respectively. The problem for determining the control word can be modeled with a bipartite graph. The proposed test and repair techniques can be easily incorporated into the ROM BIST architectures. This makes the proposed techniques more practical to be integrated into current design flow. According to experimental results, the fabrication yield can be improved significantly. Moreover, the incurred hardware overhead and timing penalty are almost negligible.
Keywords :
built-in self test; read-only storage; storage allocation; NROM-Based ROM; NROM-based ROM; ROM BIST architectures; address scrambling; customer code; data inversion techniques; fabrication yield; fault masking effects; fault replacement techniques; scrambling techniques; yield enhancement; Arrays; Circuit faults; Fabrication; Maintenance engineering; Microprocessors; Read only memory; NROM; fault masking; reliability; yield;
fLanguage :
English
Journal_Title :
Computers, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9340
Type :
jour
DOI :
10.1109/TC.2014.2315639
Filename :
6786049
Link To Document :
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