Title :
Analysis of radio frequency and stability performance on double-gate extended source tunneling field-effect transistors
Author :
Marjani, Saeid ; Hosseini, Seyed Ebrahim
Author_Institution :
Dept. of Electr. Eng., Ferdowsi Univ. of Mashhad, Mashhad, Iran
Abstract :
The radio frequency (RF) and stability performance of double-gate (DG) extended source tunneling field-effect transistors (TFETs) are evaluated by extracting RF parameters like cut-off frequency (ft), maximum oscillation frequency (fmax) and stability factor. In addition, the superb RF performances of double-gate extended source TFETs were obtained by designing gate length. The stability factor and small signal parameters such as gate capacitance and transconductance can be extracted using a non-quasi static small signal model are calculated using Y-parameters from a TCAD simulation. It was confirmed that the double-gate extended source TFET is suitable for RF applications.
Keywords :
microwave field effect transistors; millimetre wave field effect transistors; stability; technology CAD (electronics); tunnelling; DG extended source TFET; TCAD simulation; Y-parameter; double-gate extended source tunneling field effect transistor; nonquasi static small signal model; radiofrequency analysis; stability factor; Conferences; Decision support systems; Electrical engineering; Extended source; Nonquasistatic (NQS); Radio frequency (RF); Stability factor; Tunneling field-effect transistor (TFET);
Conference_Titel :
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4799-1971-0
DOI :
10.1109/IranianCEE.2015.7146364