DocumentCode
718088
Title
Low power potentiostat using switching technique for three electrode amperometric sensors
Author
Ghanabri, Sonia ; Habibi, Mehdi
Author_Institution
Dept. of Electr. Eng., Univ. of Isfahan, Isfahan, Iran
fYear
2015
fDate
10-14 May 2015
Firstpage
1154
Lastpage
1158
Abstract
A low power potentiostat is presented in this work with the aim of power consumption reduction. The proposed potentiostat has been designed to cover sensor currents in the range of milliamps. Simulation results have been obtained for a typical electrochemical cell using a 180 nm CMOS technology. Low power, low settling time and low ripple of output voltage are the main features of the proposed structure. The suggested architecture is an appropriate choice for ultra low power applications such as implantable biosensors.
Keywords
CMOS analogue integrated circuits; amperometric sensors; biosensors; CMOS technology; electrode amperometric sensors; implantable biosensors; low-power potentiostat; power consumption reduction; size 180 nm; switching technique; ultralow power applications; CMOS integrated circuits; Computer architecture; Inductors; Microprocessors; Power demand; Power dissipation; Sensors; electrochemical cell; low power; potentiostat; switching technique;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location
Tehran
Print_ISBN
978-1-4799-1971-0
Type
conf
DOI
10.1109/IranianCEE.2015.7146387
Filename
7146387
Link To Document