• DocumentCode
    718088
  • Title

    Low power potentiostat using switching technique for three electrode amperometric sensors

  • Author

    Ghanabri, Sonia ; Habibi, Mehdi

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Isfahan, Isfahan, Iran
  • fYear
    2015
  • fDate
    10-14 May 2015
  • Firstpage
    1154
  • Lastpage
    1158
  • Abstract
    A low power potentiostat is presented in this work with the aim of power consumption reduction. The proposed potentiostat has been designed to cover sensor currents in the range of milliamps. Simulation results have been obtained for a typical electrochemical cell using a 180 nm CMOS technology. Low power, low settling time and low ripple of output voltage are the main features of the proposed structure. The suggested architecture is an appropriate choice for ultra low power applications such as implantable biosensors.
  • Keywords
    CMOS analogue integrated circuits; amperometric sensors; biosensors; CMOS technology; electrode amperometric sensors; implantable biosensors; low-power potentiostat; power consumption reduction; size 180 nm; switching technique; ultralow power applications; CMOS integrated circuits; Computer architecture; Inductors; Microprocessors; Power demand; Power dissipation; Sensors; electrochemical cell; low power; potentiostat; switching technique;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    978-1-4799-1971-0
  • Type

    conf

  • DOI
    10.1109/IranianCEE.2015.7146387
  • Filename
    7146387