Dispersion compensation of 40 Gb/s data by phase conjugation in slow light engineered chalcogenide and silicon photonic crystal waveguides

Author

Koohi-Kamali, Farshid ; Moravvej-Farshi, Mohammad Kazem ; Ebnali-Heidari, Majid

Author_Institution

Fac. of Eng., Shahrekord Univ., Shahrekord, Iran

fYear

2015

fDate

10-14 May 2015

Firstpage

1209

Lastpage

1214

Abstract

We report demonstration of four-wave mixing based mid-span optical phase conjugation (OPC) in short dispersion engineered slow-light chalcogenide and silicon photonic crystal waveguides for dispersion compensation of 4 ps, 40 Gb/s return to zero pseudorandom signals transmission through an 2 km of standard optical fiber link. We take into account the impact of two photon absorption, free carrier absorption, free carrier dispersion, and repetition rate effects in our numerical simulations. We achieve conversion efficiency of -28.26 and -19.68 dB between idler and probe in Si and chalcogenide OPC using a CW pump with the power of 100 mW.

Keywords

arsenic compounds; chalcogenide glasses; elemental semiconductors; germanium compounds; multiwave mixing; optical communication equipment; optical fibre communication; optical fibre dispersion; optical links; optical phase conjugation; optical pumping; optical waveguides; photonic crystals; silicon; slow light; two-photon processes; CW pump; Ge₃₃As₁₂Se₅₅; OPC; Si; bit rate 40 Gbit/s; dispersion compensation; distance 2 km; four-wave mixing; free carrier absorption; free carrier dispersion; idler; optical phase conjugation; power 100 mW; repetition rate effects; return-to-zero pseudorandom signals transmission; silicon photonic crystal waveguides; slow light engineered chalcogenide; standard optical fiber link; two photon absorption; Conferences; Electrical engineering; Chalcogenide; Dispersion management; Four-Wave Mixing; Optical communications; Phase conjugation; Photonic crystal waveguides; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2015 23rd Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4799-1971-0

Type

conf

DOI

10.1109/IranianCEE.2015.7146399

Filename

7146399