Title :
Investigation of the p-type behavior in Cu2O: An ab initio study
Author :
Etghani, S. Ahmad ; Nadimi, Ebrahim
Author_Institution :
Electr. Eng. Dept., Univ. of Tehran, Tehran, Iran
Abstract :
Cu2O, as a p-type semiconductor, is a good alternative material for Si-based Solar cells. Investigation on Cu2O conduction mechanism is important to achieve solar cells with better efficiency. In this paper we investigated the electronic structure of crystalline Cu2O by ab initio calculations based on density functional theory. We computed the formation energy of p-type defects in a 3×3×3 supercell. The calculated defect levels along with the charge distribution analysis indicate a localization of defect induced holes in Cu2O.
Keywords :
ab initio calculations; copper compounds; density functional theory; semiconductors; silicon; solar cells; Cu2O; Si; Si-based solar cells; ab initio calculations; conduction mechanism; crystalline electronic structure; density functional theory; p-type semiconductor; Conferences; Electrical engineering; Cu Vacancy; Cuprous Oxide; Density functional theory; Photovoltaic;
Conference_Titel :
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4799-1971-0
DOI :
10.1109/IranianCEE.2015.7146424