DocumentCode :
718125
Title :
Stability investigation in RSFQ NDRO cell
Author :
Jabbari, Tahereh ; Zandi, Hesam ; Foroughi, Farshad ; Fardmanesh, Mehdi
Author_Institution :
Superconductive Electron. Res. Lab., Sharif Univ. of Technol., Tehran, Iran
fYear :
2015
fDate :
10-14 May 2015
Firstpage :
1398
Lastpage :
1402
Abstract :
There are several limitations on RSFQ circuit parameters determining their margins in critical conditions. We thoroughly investigated the sequential operation of the basic RSFQ circuits and study the corresponding behavior by comparing the measurable variables such as current response while modifying the eligible circuit´s parameters. We introduce some figures of merit such as current level stability, current fluctuation damping after each pulse and circuit sensitivity, leading to obtain optimized parameters. A NDRO, cell based on T Flip-Flop (TFF), is particularly selected to verify the procedure. The optimized parameters are achieved by software simulation, considering the figures of merit. We also calculated the critical margins for main parameters in which the circuit is still remain stable.
Keywords :
circuit stability; flip-flops; superconducting logic circuits; RSFQ NDRO cell stability; RSFQ circuit parameters; T flip-flop; critical conditions; current fluctuation damping; current level stability; figures of merit; rapid single flux quantum logic; sequential operation; Conferences; Decision support systems; Electrical engineering; Josephson Junction; Optimization; Rapid Single Flux Quantum (RSFQ); Stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4799-1971-0
Type :
conf
DOI :
10.1109/IranianCEE.2015.7146438
Filename :
7146438
Link To Document :
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