Single-Mode Emission From Ge Quantum Dots in Photonic Crystal Nanobeam Cavity

Author

Yong Zhang ; Cheng Zeng ; He Zhang ; Danping Li ; Ge Gao ; Qingzhong Huang ; Yi Wang ; Jinzhong Yu ; Jinsong Xia

Author_Institution

Sch. of Opt. & Electron. Inf., Huazhong Univ. of Sci. & Technol., Wuhan, China

Volume

27

Issue

9

fYear

2015

fDate

May1, 1 2015

Firstpage

1026

Lastpage

1029

Abstract

A freestanding one-dimensional photonic crystal nanobeam cavity embedded with Ge self-assembled quantum dots is designed and fabricated on a silicon-on-insulator substrate. Only one photoluminescence peak is observed in the wavelength range of 1000 to 1600 nm at room temperature. The emission peak dominates the photoluminescence spectrum over an almost flat and weak background emission, which indicates single-mode emission is realized in the proposed light emitter.

Keywords

elemental semiconductors; germanium; nanostructured materials; photoluminescence; photonic crystals; self-assembly; semiconductor quantum dots; silicon-on-insulator; Ge; germanium self-assembled quantum dots; one-dimensional photonic crystal nanobeam cavity; photoluminescence; silicon-on-insulator substrate; single-mode emission; temperature 293 K to 298 K; wavelength 1000 nm to 1600 nm; Cavity resonators; Light emitting diodes; Optimized production technology; Photonic crystals; Q-factor; Quantum dots; Silicon; Silicon; photoluminescence; photonic crystals; quantum dots; silicon;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2405555

Filename

7045529